Low-voltage, high speed, compact silicon modulator for BPSK modulation.

نویسندگان

  • Tiantian Li
  • Junlong Zhang
  • Huaxiang Yi
  • Wei Tan
  • Qifeng Long
  • Zhiping Zhou
  • Xingjun Wang
  • Hequan Wu
چکیده

A low voltage, high speed, compact silicon Mach-Zehnder Interferometer (MZI) modulator for Binary Phase Shift Keying (BPSK) modulation has been demonstrated. High modulation efficiency, VπLπ equals to 0.45V·cm, was obtained in a 1mm length device owing to a higher doping concentration and low-loss traveling-wave electrode. 25 Gb/s non-return-to-zero(NRZ)-BPSK with 6Vpp RF driving signal was achieved. Driven by a very low 3Vpp RF signal, the 10 Gb/s NRZ-BPSK was also realized benefiting from the high modulation efficiency and the low-voltage driving scheme. The power consumption for the BPSK modulation was as low as 0.118 W. These results prove that the silicon modulator is suitable for advanced communication system with low power consumption.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ultra-low voltage, ultra-small mode volume silicon microring modulator.

We show GHz modulation in a 2.5 microm radius silicon micro-ring, with only 150 mV peak-peak drive voltage and an electro-optic modal volume of only 2 microm(3). The swing voltage and the micro-ring modulator are the smallest demonstrations so-far in silicon. The presented approach lays the ground work for a new class of high speed low voltage modulators enabling, seamless integration of nanoph...

متن کامل

Compact 1D-silicon photonic crystal electro-optic modulator operating with ultra-low switching voltage and energy.

We demonstrate a small foot print (600 nm wide) 1D silicon photonic crystal electro-optic modulator operating with only a 50 mV swing voltage and 0.1 fJ/bit switching energy at GHz speeds, which are the lowest values ever reported for a silicon electro-optic modulator. A 3 dB extinction ratio is demonstrated with an ultra-low 50 mV swing voltage with a total device energy consumption of 42.8 fJ...

متن کامل

Field-programmable gate array (FPGA)-based designed using VHDL hardware description language transmission performance analysis of binary phase shift keying (BPSK) and quadrature phase shift Keying (QPSK) modulators

Binary phase shift keying (BPSK) and quadrature phase shift Keying (QPSK) modulation techniques are often proposed for satellite communications and band-limited communication channels; however, both modulations are important in high speed data communications. High speed data communications are implemented on high speed hardware in wireless systems. The paper presents the design of a QPSK and BP...

متن کامل

A Compact Hybrid Silicon/Electro-Optic Polymer Resonant Cavity Modulator Design

The design and simulation of a novel resonant cavity optical modulator incorporating a hybrid silicon/electro-optic polymer slot waveguide structure is presented in this work. The device utilizes the electro-optic polymer in the cavity region to provide an active material for modulation and includes distributed Bragg reflectors in single mode silicon waveguide regions at each end of the cavity ...

متن کامل

Capacitor-embedded 0.54 pJ/bit silicon-slot photonic crystal waveguide modulator.

A high-speed compact silicon modulator based on the lateral capacitor configuration is experimentally demonstrated with low-power consumption and 3 dB modulation depth. The capacitor layout is introduced to scale down the total modulator capacitance to 30x10(-15) F, which effectively reduces the rf power consumption to 0.54 pJ/bit. Exploiting the slow group velocity of light in the slot photoni...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Optics express

دوره 21 20  شماره 

صفحات  -

تاریخ انتشار 2013